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SUMMARY:Mirzanezhad\, H. (EE) - Van der Waals materials-based memory devices for neuromorphic computing
DESCRIPTION:The separation of memory and processing in conventional computer architectures leads to significant energy consumption associated with data transfer\, known as the von Neumann bottleneck. Two-dimensional (2D) materials provide a promising platform for developing nanoscale memory devices for in-memory and neuromorphic computing because of their atomic-scale thickness\, lack of dangling bonds\, and ability to form van der Waals structures. In this work\, bilayer MoS₂ is investigated as an active material for memory devices based on two different switching mechanisms. The first is a resistive memory based on a vertical junction that exhibits a reproducible hysteresis loop and can operate as a memristor. Possible mechanisms contributing to the observed hysteresis include ion migration\, charge trapping\, polarization switching\, or a combination of these mechanisms. The second is a ferroelectric memory based on the established ferroelectricity of parallel-stacked bilayer MoS₂\, where broken inversion symmetry gives rise to switchable out-of-plane polarization. This work therefore follows two parallel directions: a memory device based on the resistive effect and a memory device based on the ferroelectric effect\, with the longer-term goal of developing 2D material-based memory devices for neuromorphic computing. \nEvent Host: Hamid Mirzanezhad\, Ph.D. Student\, Electrical Engineering  \nAdvisor: Aiming Yan
URL:https://events.ucsc.edu/event/mirzanezhad-h-ee-van-der-waals-materials-based-memory-devices-for-neuromorphic-computing/
LOCATION:Jack Baskin Engineering\, Baskin Engineering 1156 High Street\, Santa Cruz\, CA\, 95064
CATEGORIES:Ph.D. Presentations
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